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May 2005 FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild s high 15 A, 60 V. RDS(ON) = 100 m @ VGS = 10 V voltage PowerTrench process. It has been optimized RDS(ON) = 130 m @ VGS = 4.5 V for power management applications. Fast switching speed Applications High performance trench technology for extremely DC/DC converter low RDS(ON) Power management Load switch High power and current handling capability S D G G S TO-252 D Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage 20 V ID Drain Current Continuous (Note 3) A 15 Pulsed (Note 1a) 45 PD Power Dissipation for Single Operation (Note 1) 42 W (Note 1a) 3.8 ... See More ⇒

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