View fdmc7200 datasheet:

June 2009 FDMC7200 Dual N-Channel PowerTrench MOSFET 30 V, 12 m and 23.5 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node Max rDS(on) = 23.5 m at VGS = 10 V, ID = 6 A has been internally connected to enable easy placement and Max rDS(on) = 38 m at VGS = 4.5 V, ID = 5 A routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been Q2 N-Channel designed to provide optimal power efficiency. Max rDS(on) = 12 m at VGS = 10 V, ID = 8 A Max rDS(on) = 18 m at VGS = 4.5 V, ID = 7 A Applications RoHS Compliant Mobile Computing Mobile Internet Devices General Purpose Point of Load D1 D1 Q2 D1 Q2 S2 D1 5 4 5 4 Pin 1 G1 D1 D1 S2 6 3 6 3 D2/S1 S2 D1 7 2 7 2 S2 G1 G2 8 1 S2 ... See More ⇒

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 fdmc7200.pdf Design, MOSFET, Power

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