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HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high 40A, 600V at TC = 25oC voltage switching devices combining the best features of 600V Switching SOA Capability MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on- Short Circuit Rated state voltage drop varies only moderately between 25oC and Low Conduction Loss 150oC. Related Literature The IGBT is ideal for many high voltage switching - TB334 Guidelines for Soldering Surface Mount applications operating at moderate frequencies where low Components to PC Boards conduction losses are essential, such as AC and D... See More ⇒

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