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View irf634b irfs634b detailed specification:

November 2001 IRF634B/IRFS634B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.1A, 250V, RDS(on) = 0.45 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter IRF634B IRFS634B Units VD... See More ⇒

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