All Transistors. Equivalents Search

View irf640 rf1s640 rf1s640sm detailed specification:

IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power Features MOSFETs 18A, 200V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.180 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode SOA is Power Dissipation Limited of operation. All of these power MOSFETs are designed for Nanosecond Switching Speed applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high Linear Transfer Characteristics power bipolar switching transistors requiring high speed and High Input Impedance low gate drive power. These types can be operated directly Related Literature from integrated ci... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 irf640 rf1s640 rf1s640sm.pdf Design, MOSFET, Power

 irf640 rf1s640 rf1s640sm.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf640 rf1s640 rf1s640sm.pdf Database, Innovation, IC, Electricity