All Transistors. Equivalents Search

 

View mje13001c2 detailed specification:

mje13001c2mje13001c2

MJE13001C2(3DD13001C2) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.25 A C P (Ta=25 ) 1.0 W C T 150 j T -55 150 stg /Electrical characteristics(Ta=25 ) Rating Symbol Test condition Unit Min Typ Max V I =1mA I =0 600 V CBO C E V I =10mA I =0 400 V CEO C B V I =1mA I =0 9.0 V EBO E C I V =600V I =0 0.1 mA CBO CB E I V =400V I =0 0.1 mA CEO CE B I V =9.0V I =0 0.1 mA EBO EB C h V =20V I =20mA 10 40 FE CE C V I =100mA I =20mA 0.6 V CE(sat)(1) C B V I =50mA I =10mA 0.5 V CE(sat)(2) C B ... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 mje13001c2.pdf Design, MOSFET, Power

 mje13001c2.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mje13001c2.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.