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MJE13002G6(3DD13002G6) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.75 A C P (Ta=25 ) 1.25 W C P (T =25 ) 30 W C C T 150 j T -55 150 stg /Electrical characteristics(Ta=25 ) Rating Symbol Test condition Unit Min Typ Max V I =1mA I =0 600 V CBO C E V I =10mA I =0 400 V CEO C B V I =1mA I =0 9.0 V EBO E C I V =600V I =0 0.1 mA CBO CB E I V =400V I =0 0.1 mA CEO CE B I V =9.0... See More ⇒

 

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 mje13002g6.pdf Design, MOSFET, Power

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