All Transistors. Equivalents Search

View gsmbss138 detailed specification:

GSMBSS138 50V N-Channel Enhancement Mode MOSFET Product Description Features The GSMBSS138 is the N-Channel enhancement 50V/0.2A , RDS(ON)=3.5 @VGS=5V mode field effect transistors are produced using 50V/0.2A , RDS(ON)=10 @VGS=2.75V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize Exceptional on-resistance and maximum DC on-state resistance while provide rugged, reliable, current capability and fast switching performance. SOT-23 package design Applications DC to DC Converter Cellular & PCMCIA Card Cordless Telephone Power Management in Portable and Battery etc. Packages & Pin Assignments GSMBSS138JZF (SOT-23) G 1 Gate S 2 Source D 3 Drain Ordering Information GS P/N GSMBSS138 JZ F Package Code Pb Free Code... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 gsmbss138.pdf Design, MOSFET, Power

 gsmbss138.pdf RoHS Compliant, Service, Triacs, Semiconductor

 gsmbss138.pdf Database, Innovation, IC, Electricity