View 30p10a to252 to251 datasheet:

GOFORD 30P10ADescription The 30P10A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagramVDSS RDS(ON) RDS(ON) ID @ (Typ) @-10V (Typ)-4.5V -100V 39 m 33 m -30A Super high dense cell design Advanced trench process technology Reliable and rugged High density cell design for ultra low On-Resistance Marking and pin assignment Application Portable equipment and battery powered systems TO-251 TO-252 Absolute Maximum Ratings (TC=25unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID -30 A Drain Current-Continuous(TC=100) ID (100) -21 A Pulsed Drain Current IDM -140 A Maximum Power Dissipation

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