View buz84a datasheet:

isc N-Channel Mosfet Transistor BUZ84AFEATURESStatic Drain-Source On-Resistance: R = 1.5(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers for high powerbipolar switching transistors requiring high speed and low gatedrive power.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 800 VDSS GSV Gate-Source Voltage 20 VGSI Drain Current-continuous@ TC=37 6 ADP Total Dissipation@TC=25 125 WtotT Max. Operating Junction Temperature -55~150 jT Storage Temperature Range -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resi

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