All Transistors. Equivalents Search

View irf630f detailed specification:

MOSFET INCHANGE IRF630F N-channel mosfet transistor Features With TO-220F package 1 2 3 Low on-stateand thermal resistance Fast switching VDSS=200V; RDS(ON) 0.4 ;ID=9A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 200 V VGS Gate-source voltage 20 V ID Drain Current-continuous@ TC=25 9 A Ptot Total Dissipation@TC=25 35 W Tj Operating Junction temperature 150 Tstg Storage temperature -65 150 TO-220F Electrical Characteristics Tc=25 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-source breakdown voltage VGS=0; ID=0.25mA 200 V VGS(TH) Gate threshold voltage VDS= VGS; ID=1mA 2 4 V RDS(ON) Drain-source on-stage resistance VGS=10V; ID=5.4A 400 m 100 IGSS Gate source leakage current VGS= 20V;VDS=0 nA IDSS Zero gate voltage drain ... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 irf630f.pdf Design, MOSFET, Power

 irf630f.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf630f.pdf Database, Innovation, IC, Electricity