All Transistors. Equivalents Search

View mje13003 detailed specification:

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13003 DESCRIPTION With TO-126 package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 700 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current (DC) 1.5 A ICM Collector current-Peak 3 A IB Base current 0.75 A IBM Base current-Peak 1.5 A IE Emitter current 2.25 A IEM Emitter current-Peak 4.5 A Ta=25 1.4 PD Total power dissipation W TC=25 ... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 mje13003.pdf Design, MOSFET, Power

 mje13003.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mje13003.pdf Database, Innovation, IC, Electricity