View mje13004 detailed specification:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13004 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 9 V IC Collector current (DC) 4 A ICM Collector current-Peak 8 A IB Base current 2 A IBM Base current-PeaK 4 A Ta=25 2 PD Total power dissipation W TC=25 75 Tj Junction temperature 150 Tstg Storage temperature -6... See More ⇒
Keywords - ALL TRANSISTORS SPECS
mje13004.pdf Design, MOSFET, Power
mje13004.pdf RoHS Compliant, Service, Triacs, Semiconductor
mje13004.pdf Database, Innovation, IC, Electricity
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet

