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View auirf6215s detailed specification:

AUTOMOTIVE GRADE AUIRF6215S HEXFET Power MOSFET Features Advanced Planar Technology VDSS -150V Low On-Resistance P-Channel MOSFET RDS(on) max. 0.29 Dynamic dv/dt Rating 175 C Operating Temperature ID -13A Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * S G Description D2 Pak Specifically designed for Automotive applications, this cellular design of AUIRF6215S HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the G D S fast switching speed and ruggedized device design that HEXFET power Gate Drain Source MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automo... See More ⇒

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