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View sgb10n60a detailed specification:

sgb10n60asgb10n60a

SGB10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-263-3-2 Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models http //www.infineon.com/igbt/ Type VCE IC VCE(sat) Tj Marking Package SGB10N60A 600V 10A 2.3V G10N60A PG-TO-263-3-2 150 C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current IC A 20 TC = 25 C 10.6 TC = 100 C Pulsed collector current, tp limi... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 sgb10n60a.pdf Design, MOSFET, Power

 sgb10n60a.pdf RoHS Compliant, Service, Triacs, Semiconductor

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