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View auirfn8458 detailed specification:

AUTOMOTIVE GRADE AUIRFN8458 Features VDSS 40V Advanced Process Technology Dual N-Channel MOSFET RDS(on) typ. 8.0m Ultra Low On-Resistance max 10m 175 C Operating Temperature Fast Switching ID Repetitive Avalanche Allowed up to Tjmax 43A (@TC (Bottom) = 25 C Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and DUAL PQFN 5X6 mm improved repetitive avalanche rating. These features combine to make this product an extremely efficient and G D S reliable device for use in Automotive and wide variety of other applic... See More ⇒

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