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View auirgs30b60k detailed specification:

PD - 96334 AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features Low VCE(on) Non Punch Through IGBT Technology IC = 50A, TC=100 C 10 s Short Circuit Capability at TJ=175 C Square RBSOA G tsc > 10 s, TJ=150 C Positive VCE(on) Temperature Coefficient E Maximum Junction Temperature rated at 175 C VCE(on) typ. = 1.95V n-channel Lead-Free, RoHS Compliant Automotive Qualified * Benefits Benchmark Efficiency for Motor Control Rugged Transient Performance Low EMI D2Pak TO-262 Excellent Current Sharing in Parallel Operation AUIRGS30B60K AUIRGSL30B60K GC E Gate Collector Emitter Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of ... See More ⇒

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