View irf7317pbf datasheet:

PD - 95296IRF7317PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-ResistanceS1 D1l Dual N and P Channel MOSFET2 7G1 D1l Surface Mount VDSS 20V -20V3 6S2 D2l Fully Avalanche Rated45G2 D2l Lead-FreeP-CHANNEL MOSFETRDS(on) 0.029 0.058DescriptionTop ViewFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designerwith an extremely efficient and reliable device for usein a wide variety of applications.The SO-8 has been modified through a customizedleadframe for enhanced thermal characteristics andmultiple-die capability making it ideal in a varie

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