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View irfb3006pbf detailed specification:

IRFB3006PbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification RDS(on) typ. 2.1m in SMPS l Uninterruptible Power Supply max. 2.5m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic D dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability S D l Lead-Free G l RoHS Compliant, Halogen-Free TO-220AB GDS Gate Drain Source Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRFB3006PbF TO-220 Tube 50 IRFB3006PbF Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V (Silicon Limited) 270 ID @ TC = 100 C Continuous Drain Current, VGS @ 10V (Silicon... See More ⇒

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