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View irgs15b60kd detailed specification:

PD - 95194 IRGB15B60KDPbF IRGS15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL15B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. IC = 15A, TC=100 C 10 s Short Circuit Capability. Square RBSOA. G tsc > 10 s, TJ=150 C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. E TO-220 is available in PbF as a Lead-Free VCE(on) typ. = 1.8V n-channel Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. TO-220AB D2Pak TO-262 IRGB15B60KDPbF IRGS15B60KD IRGSL15B60KD Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25 C Continuous Collector Current 31 IC @ TC = 100 C Cont... See More ⇒

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