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View irgs30b60k detailed specification:

PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features IC = 50A, TC=100 C Low VCE (on) Non Punch Through IGBT Technology. at TJ=175 C 10 s Short Circuit Capability. G Square RBSOA. tsc > 10 s, TJ=150 C Positive VCE (on) Temperature Coefficient. E Maximum Junction Temperature rated at 175 C. VCE(on) typ. = 1.95V n-channel Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. TO-220AB D2Pak TO-262 IRGB30B60K IRGS30B60K IRGSL30B60K Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V 78 IC @ TC = 25 C Continuous Collector Current IC @ TC = 100 C Continuous Collector Current 50 A ICM Pulse Collector Current (Ref.Fig.C.T.5) 120 Clamped Inductive Load ... See More ⇒

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