All Transistors. Equivalents Search

View ixfh21n50 ixfh24n50 ixfh26n50 ixfm21n50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50 detailed specification:

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM21N50 500 V 21 A 0.25 Power MOSFETs IXFH/IXFM/IXFT24N50 500 V 24 A 0.23 IXFH/IXFT26N50 500 V 26 A 0.20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V (TAB) VGS Continuous 20 V VGSM Transient 30 V TO-268 (D3) Case Style ID25 TC = 25 C 21N50 21 A 24N50 24 A 26N50 26 A G IDM TC = 25 C, pulse width limited by TJM 21N50 84 A 24N50 96 A S (TAB) 26N50 104 A IAR TC = 25 C 21N50 21 A TO-204 AE (IXFM) 24N50 24 A 26N50 26 A EAR TC = 25 C30 mJ G dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS,5 V/ns D TJ 150 C, RG = 2 G = Gate, D = Drain, S = Source, T... See More ⇒

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