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View ixti10n60p detailed specification:

IXTA 10N60P VDSS = 600 V PolarHVTM IXTI 10N60P ID25 = 10 A Power MOSFET IXTP 10N60P RDS(on) 740 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C 600 V VDGR TJ = 25 C to 175 C; RGS = 1 M 600 V G VGS Continuous Transient 30 V S (TAB) ID25 TC = 25 C10 A IDM TC = 25 C, pulse width limited by TJM 30 A Leaded TO-263 (IXTI) IAR TC = 25 C10 A EAR TC = 25 C20 mJ EAS TC = 25 C 500 mJ dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS, 10 V/ns G TJ 150 C, RG = 10 D (TAB) S PD TC = 25 C 200 W TJ -55 ... +150 C TO-220 (IXTP) TJM 150 C Tstg -55 ... +150 C TL 1.6 mm (0.062 in.) from case for 10 s 300 C TSOLD Plastic body for 10 s 260 C (TAB) G Md Mounting torque (TO-220) 1.13/10 Nm/lb.in. D S FC Mounting f... See More ⇒

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