View cj3434 datasheet:

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3434 N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 m@10V4230V 44 m 5A@4.5Vm@2.5V50FEATURE APPLICATION TrenchFET Power MOSFET Ideal for Load Swith and Battery Low RDS(ON) Protection Applications Typical ESD Protection Equivalent Circuit MARKING DGSABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 VGate-Source Voltage VGS 10 VContinuous Drain Current ID 5 APulsed Drain Current IDM* 20 AThermal Resistance from Junction to Ambient RJA 417 /W Junction Temperature TJ 150 Storage Temperature TSTG -55~+150 Lead Temperature for Soldering Purposes(1/8 from case for 10 s) TL 260 *Repetitive ratingPluse width limited by junction

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