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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF07N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast 1. GATE recovery time. Desighed for high voltage, high speed switching 2. DRAIN applications such as power supplies, converters, power motor controls and bridge circuits. 3. SOURCE FEATURE High Current Rating Lower RDS(on) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Fast Switching Capability Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V C... See More ⇒

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