View ss8550 detailed specification:
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT- 23 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) SOT 23 FEATURES High Collector Current Complementary to SS8050 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO 3. COLLECTOR V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current -1.5 A P Collector Power Dissipation 00 mW C R Thermal Resistance From Junction To Ambient /W JA T Junction Temperature 150 j T Storage Temperature -55 +150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =-100 A, I =0 -40 V (BR)CBO C E Collector-emitter breakdown voltage V I =-0.1mA, ... See More ⇒
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ss8550.pdf Design, MOSFET, Power
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