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View jjt10n65ss datasheet:

jjt10n65ssjjt10n65ss

650V 10A Trench and Field Stop IGBTJJT10N65SSKey performance: V =650VCETO-220F I =10A@T =100C C V =1.8 VCE(sat)Features: High ruggedness performance 10s short circuit capabilityGCE Positive V temperature coefficientCE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliantApplications: Home appliances Motor drivesPackage parametersType Marking Package Packaging methodJJT10N65SS T1065SS TO-220F TubeAll product information is copyrighted and subject to legal disclaimers. REV A.1.2 | FEB 20251JJT10N65SSMaximum ratingsSymbol Parameter Values UnitV Collector-emitter voltage 650 VCESV Gate-emitter voltage 20 VGESContinuous collector current (T =25) 20 ACICContinuous collector current (T =100) 10 ACI Pulsed collector

 

Keywords - ALL TRANSISTORS DATASHEET

 jjt10n65ss.pdf Design, MOSFET, Power

 jjt10n65ss.pdf RoHS Compliant, Service, Triacs, Semiconductor

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