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View jjt40n65le datasheet:

jjt40n65lejjt40n65le

650V 40A Trench and Field Stop IGBTJJT40N65LEKey performance: V =650VCETO-247 I =40A@T =100C C V =1.4VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: EV chargersPackage parametersType Marking Package Packaging MethodJJT40N65LE T4065LE TO-247 TubeAll product information is copyrighted and subject to legal disclaimers. REV A.1.0 | SEP 20241JJT40N65LEMaximum ratingsSymbol Parameter Values UnitV Collector-emitter voltage 650 VCESV Gate-emitter voltage 20 VGESContinuous collector current (T =25) 80 ACICContinuous collector current (T =100) 40 ACI Pulsed collector current, t limited by T 160 ACM p vjmaxI Diode continuous forward cur

 

Keywords - ALL TRANSISTORS DATASHEET

 jjt40n65le.pdf Design, MOSFET, Power

 jjt40n65le.pdf RoHS Compliant, Service, Triacs, Semiconductor

 jjt40n65le.pdf Database, Innovation, IC, Electricity

 

 
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