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View jmsh1004bgwq datasheet:

jmsh1004bgwqjmsh1004bgwq

JMSH1004BGWQ100V 3.6m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)2.9 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 152 A Wettable Flanks design support high manufacturability and RDS(ON) (@ VGS = 10V)3.6 mAutomated Optical Inspection (AOI) Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDFN5x6-8L-WPin ConfigurationTop ViewBottom ViewTop ViewD1827G 3645SOrdering InformationDevice Package # of Pins Marking MSL TJ (C) Media Quantity (pcs)JMSH1004BGWQ-13 PDFN5x6-8L-W 8 SH1004BQ 1 -55 to 175 13-inch Reel 5000Absolute Maximum Ratings (@ TA = 25C unless otherwise specified)Parameter Symbol Value UnitDrain-to-Source Voltage VDS 100 VGate-to-Sou

 

Keywords - ALL TRANSISTORS DATASHEET

 jmsh1004bgwq.pdf Design, MOSFET, Power

 jmsh1004bgwq.pdf RoHS Compliant, Service, Triacs, Semiconductor

 jmsh1004bgwq.pdf Database, Innovation, IC, Electricity

 

 
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