View jmsh1006pe datasheet:

100V, 116A, 5.7m N-channel Power SGT MOSFETJMSH1006PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 100 V 100% Vds TESTEDVGS(th)_Typ 3.2 V Halogen-free; RoHS-compliantID(@VGS=10V) 116 A Pb-free platingRDS(ON)_Typ(@VGS=10V 5.7 mWApplications Load Switch PWM Application Power ManagementDG STO-263-3L Top ViewSchematic DiagramPin AssignmentOrdering InformationPer CartonDevice PackageMarking MSL Form Reel(pcs)(pcs)JMSH1006PE TO-263-3LSH1006P 3 Tape&Reel 800 4000Absolute Maximum Ratings (@ TC = 25C unless otherwise specified)Parameter ValueSymbol UnitVDS Drain-to-Source Voltage 100 VVGS Gate-to-Source Voltage 20 VTC = 25 116CIDContinuous Drain Current ATC = 100 82CIDM Refer to Fig.4 APulsed Drain Current (1)EAS

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 jmsh1006pe.pdf Design, MOSFET, Power

 jmsh1006pe.pdf RoHS Compliant, Service, Triacs, Semiconductor

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