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Power Transistors www.jmnic.com 2SA634 Silicon PNP Transistors B C E Features With TO-220 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 40 V VCEO Collector to emitter voltage 40 V VEBO Emitter to base voltage 5.0 V IB Base collector current A IC Collector current 3.0 A PC Collector power dissipation 10 W Tj Junction temperature 150 Tstg Storage temperature -55 +150 TO-220 Electrical Characteristics Tc=25 SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT ICBO Collector-base cut-off current VCB=40V; IE=0 200 uA IEBO Emitter-base cut-off current VEB=5.0V; IC=0 200 uA ICEO Collector-emitter cut-off current VCE=40V; IB=0 0.5 mA VCBO Collector-base breakdown voltage VCEO(SUS) Collector-emitter sustaining voltage IC=1mA; IB=0 40 V VEBO Emitter-base breakdown voltage IE=1mA; Ic=0 5 VCE(sat-1) Co... See More ⇒

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