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View 2sb1186 detailed specification:

JMnic Product Specification Silicon PNP Power Transistors 2SB1186 DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1763 High breakdown voltage APPLICATIONS For use in low frequency power amplifer applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector -emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -1.5 A ICM Collector current-peak -3.0 A Ta=25 2.0 PC Collector power dissipation W TC=25 20 Tj Junction temperature 150 Tstg Storage temperature -55 150 JMnic Product Specification Silicon PNP Power Transistors 2SB1186 CHARACTERISTICS Tj=25 unless otherwise specified SY... See More ⇒

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