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View 2sd2470 detailed specification:

2SD2470 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features Low saturation voltage VCE(sat) 0.5V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 8 V IC Collector Current Continuous 5 A PC Collector Power Dissipation 400 mW TJ Junction Temperature 150 Dimensions in inches and (millimeters) Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50 A , IE=0 15 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 10 V Emitter-base breakdown voltage V(BR)EBO IE=50 A, IC=0 8 V Collector cut-off current ICBO VCB=10V, IE=0 0.1 A Emitter ... See More ⇒

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