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View mmmbt2222a sot-23 detailed specification:

MMBT2222A SOT-23 Transistor(NPN) SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING 1P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Power Dissipation 350 mW TJ Junction Temperature 150 Tstg Storage Temperature -55to+150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 75 V IC= 10 A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO 6 V IE=10 A, IC=0 Coll... See More ⇒

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