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mmbt2222awt1rev0mmbt2222awt1rev0

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2222AWT1/D Preliminary Information MMBT2222AWT1 General Purpose Transistor Motorola Preferred Device NPN Silicon These transistors are designed for general purpose amplifier applica- tions. They are housed in the SOT 323/SC 70 package which is designed for low power surface mount applications. COLLECTOR 3 3 1 1 BASE 2 2 CASE 419 02, STYLE 3 EMITTER SOT 323/SC 70 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Collector Base Voltage VCBO 75 Vdc Emitter Base Voltage VEBO 6.0 Vdc Collector Current Continuous IC 600 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR 5 Board PD 150 mW TA = 25 C Thermal Resistance Junction to Ambient RqJA 833 C/W Junction and Storage Temperature TJ, Tstg 55 to +150

 

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