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View mrf164wr datasheet:

mrf164wrmrf164wr

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF164W/DThe RF TMOS LinePower Field Effect TransistorNChannel Enhancement Mode MRF164WDesigned primarily for wideband largesignal output and driver stages to 500MHz. Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 20 W20 W, to 500 MHz Minimum Gain = 15 dBTMOS PushPull Configuration Reduces Even Numbered Harmonics BROADBANDRF POWER FET Excellent Thermal Stability, Ideally Suited for Class AOperation Facilitates Manual Gain Control, ALC and ModulationTechniques 100% Tested for Load Mismatch at All Phase Angleswith 30:1 VSWR Circuit board photomaster available upon request byDcontacting RF Tactical Marketing in Phoenix, AZ.GS(FLANGE)GCASE 41201, STYLE 1DMAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDSS 6

 

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