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NCE65TF180T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 160 m DS(ON) with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features Optimized body diode reverse recovery performance Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Application Power factor correction PFC Schematic diagram Switched mode power supplies(SMPS) Uninterruptible Power Supply UPS LLC Half-bridge Package Marking And Ordering Information Device Device Package Ma... See More ⇒

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