View pm567ea datasheet:

P-Channel Enhancement Mode PM567EA NIKO-SEM SOT-23(S) Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 520m -0.8A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ESD Protection - HBM Class : 1C. Applications G: GATE Protection Circuits Applications. D: DRAIN Logic/Load Switch Circuits Applications. S: SOURCE Space Limit & Smart Devices Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 12 V TA = 25 C -0.8 Continuous Drain Current ID TA = 70 C -0.64 A Pulsed Drain Current1 IDM -2.1 TA = 25 C 0.56 Power Dissipation PD W

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