View buz11 detailed specification:
BUZ11 Data Sheet September 2013 File Number 2253.2 Features N-Channel Power MOSFET 50V, 30A, 40 m 30A, 50V This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.040 field effect transistor designed for applications such as SOA is Power Dissipation Limited switching regulators, switching converters, motor drivers, Nanosecond Switching Speeds relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. Linear Transfer Characteristics This type can be operated directly from integrated circuits. High Input Impedance Formerly developmental type TA9771. Majority Carrier Device Ordering Information Related Literature - TB334 Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND Components to PC Boards BUZ11-NR4941 TO-220AB BUZ11 NOTE Wh... See More ⇒
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buz11.pdf Design, MOSFET, Power
buz11.pdf RoHS Compliant, Service, Triacs, Semiconductor
buz11.pdf Database, Innovation, IC, Electricity
