View ptb23003x 3 datasheet:

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D031PTB23003XNPN microwave power transistor1997 Nov 13Product specificationSupersedes data of 1997 Feb 19Philips Semiconductors Product specificationNPN microwave power transistor PTB23003XFEATURES PINNING - SOT440A Diffused emitter ballasting resistors providing excellentPIN DESCRIPTIONcurrent sharing and withstanding a high VSWR1 collector Interdigitated structure provides high emitter efficiency2 emitter Multicell geometry gives good balance of dissipated3 base; connected to flangepower and low thermal resistance Localized thick oxide auto-alignment process and goldsandwich metallization ensure an optimum temperatureprofile and excellent performance and reliability.1olumnscAPPLICATIONSbCommon-base, class B power amplifiers up to 4.2 GHz.3eDESCRIPTIONMA

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