View mmdt3906sg detailed specification:
MMDT3906SG Double PNP Transistors Features SOT-23-6 For switching and amplifier applications 4.C2 5.E1 3.B2 6.C1 2.E2 Equivalent Circuit 1.B1 Marking Code 3906 Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 40 V CBO Collector Emitter Voltage -V 40 V CEO Emitter Base Voltage -V 6 V EBO Collector Current -I 200 mA C Maximum Power Dissipation P 1 W D Junction Temperature T 150 J Storage Temperature Range T -55 to +150 STG 1 / 6 www.pingjingsemi.com Revision 1.0 Mar-2021 MMDT3906SG Double PNP Transistors Electrical Characteristics (T =25 ) A Parameter Symbol Min. Max. Unit DC Current Gain at V = -1 V, I = -0.1 mA 60 -- CE C at V = -1 V, I = -1 mA 80 -- CE C H -- FE at V = -1 V, I = -10 mA 100 300 CE C at V = -1 V, I = -... See More ⇒
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