View pnmtof650v13 datasheet:

PNMTOF650V13 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)() ID(A) 650 0.7@VGS=10V 13G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 650 VGate-Source Voltage VGS 30 V TA=25 13 Continuous Drain ID A Curren(TJ=150) TA=100 Figure 3Pulsed Drain Current,VGS@10V IDM Figure 6 APower Dissipation 125 W PD Derating Factor above 25 1.0 w/ Peak Diode Recovery dv/dt dv/dt 5.0 V/ns Single Pulse Avalanche Engergy L=11.9mH, ID=5.2Amps EAS 1000 mJ Pulsed Avalanche Rating IAS Figure 8Maximum Temperature for Soldering Leads at 0.063in(1.6mm) from case for 10 seconds TL 300 Package Body for 10 seconds TPKG 260 Operating Junction and Storage Te

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