View ruh40d40m detailed specification:
RUH40D40M Dual N-Channel Advanced Power MOSFET Features Pin Description 40V/40A, D2 RDS (ON) =6m (Typ.)@VGS=10V D2 D1 RDS (ON) =8m (Typ.)@VGS=4.5V D1 Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching Loss G2 Ultra Low On-Resistance S2 G1 Excellent QgxRDS(on) product(FOM) S1 100% Avalanche Tested PIN1 Lead Free and Green Devices (RoHS Compliant) DFN5060 D1 D2 Applications DC/DC Converters G1 G2 On Board Power for Server Synchronous Rectification S1 S2 Dual N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25 C Unless Otherwise Noted) VDSS Drain-Source Voltage 40 V VGSS Gate-Source Voltage 20 TJ Maximum Junction Temperature 150 C TSTG Storage Temperature Range -55 to 150 C IS Diode Continuous Forward Current TC=25 C 40 A Mounted... See More ⇒
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ruh40d40m.pdf Design, MOSFET, Power
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