View stk600 datasheet:

GrerrPPrPrProSTK600aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) () MaxVDSS IDRugged and reliable.0.9 @ VGS=10VSuface Mount Package.60V 0.8A1.3 @ VGS=4.5VESD Protected.DDGSDSOT-89GS(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol Parameter UnitsLimitVDS Drain-Source Voltage 60VVGS Gate-Source Voltage 20VTA=25C 0.80 AaID Drain Current-ContinuousTA=70C 0.65 AbIDM-Pulsed 4.4 AdEAS mJSingle Pulse Avalanche Energy 0.56TA=25C 1.25 WPDMaximum Power DissipationTA=70C 0.8 WOperating Junction and StorageTJ, TSTG Temperature Range -55 to 150 CTHERMAL CHARACTERISTICSRJA Thermal Resistance, Junction-to-Ambient 100 C/WDetails are subject

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