View ksp10 datasheet:

KST10/11 NPN EPITAXIAL SILICON TRANSISTORAMPLIFIER TRANSITORTO-92ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 30 VCollector-Emitter Voltage VCEO 25 VEmitter-Base Voltage VEBO 3.0 VCollector Dissipation (Ta=25 ) PC 350 mW Derate above 25 mW/ 2.8Collector Dissipation (Ta=25 ) WPC 1.0 Derate above 25 W/ 8.0Junction TemperatureTJ 150Storage TemperatureTSTG -55~150Thermal Resistance, Junction to Case /WRth(j-c) 125Thermal Resistance, Junction to Ambient /WRth(j-a)3571. Emitter 2. Base 3. CollectorELECTRICAL CHARACTERISTICS (T =25 )ACharacteristic Symbol Test Conditions Min Max UnitCollector-Baser Breakdown Voltage BVCBO IC=100 , IE=0 30 VCollector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 25 VEmitter-Base Breakdown VoltageBVEBO IE=10 , IC=0 3.0 VCollector Cut-off C

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