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View 2n2222ac1b detailed specification:

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 75V VCEO Collector Emitter Voltage 50V VEBO Emitter Base Voltage 6V IC Continuous Collector Current 800mA PD TA = 25 C Total Power Dissipation at 500mW Derate Above 37.5 C 3.08mW/ C TJ Junction Temperature Range -65 to +200 C Tstg Storage Temperature Range -65 to +200 C THERMAL PROPERTIES (Each Device) Symbols Parameters Min. Typ. Max. Units R JA Thermal Resistance, Junction To Ambient 325 C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions... See More ⇒

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