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View 2sc945r 2sc945o 2sc945y 2sc945p 2sc945l detailed specification:

2sc945r_2sc945o_2sc945y_2sc945p_2sc945l2sc945r_2sc945o_2sc945y_2sc945p_2sc945l

2SC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor 2SA733 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurations. TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 150 mA Power Dissipation Ptot 250 mW O Junction Temperature Tj 150 C O Storage Temperature Range Tstg - 55 to + 150 C O Characteristics at Ta = 25 C Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group R hFE 40 - 80 - O h... See More ⇒

 

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 2sc945r 2sc945o 2sc945y 2sc945p 2sc945l.pdf Design, MOSFET, Power

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