All Transistors. Equivalents Search

View d882-sot89 detailed specification:

Shenzhen Tuofeng Semiconductor Technology Co., Ltd D882 SOT-89 SOT-89 1. BASE 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC = 100 A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100 A, IC=0 6 V Collector cut-off current ICBO VCB= 40V, IE=0 1 A Collector cut-off current ICEO VCE= 30V, IB=0 10 A Emitter cut-... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 d882-sot89.pdf Design, MOSFET, Power

 d882-sot89.pdf RoHS Compliant, Service, Triacs, Semiconductor

 d882-sot89.pdf Database, Innovation, IC, Electricity