View std13nm60nd stf13nm60nd stp13nm60nd detailed specification:
STD13NM60ND, STF13NM60ND, STP13NM60ND N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB Order codes VDS @ TJmax RDS(on) max ID 3 1 3 STD13NM60ND 2 1 DPAK STF13NM60ND 650 V 0.38 11 A TO-220FP STP13NM60ND TAB The worldwide best RDS(on)* area among fast recovery diode devices 3 2 100% avalanche tested 1 TO-220 Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche Figure 1. Internal schematic diagram capabilities D(2, TAB) Applications Switching applications Description G(1) These FDmesh II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh S(3) technology. Utilizing a new strip-layout vertical structur... See More ⇒
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