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SSM3J108TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J108TU High Speed Switching Applications 1.8V drive Unit mm Low on-resistance Ron = 363m (max) (@VGS = -1.8 V) Ron = 230m (max) (@VGS = -2.5 V) 2.1 0.1 Ron = 158m (max) (@VGS = -4.0 V) 1.7 0.1 Absolute Maximum Ratings (Ta = 25 C) 1 Characteristic Symbol Rating Unit 3 2 Drain-Source voltage VDS -20 V Gate-Source voltage VGSS 8 V DC ID -1.8 Drain current A Pulse IDP -3.6 PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 Channel temperature Tch 150 C 1 Gate Storage temperature range Tstg -55 150 C 2 Source 3 Drain Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in UFM temperature, etc.) may cause this product to decrease in the reliability si... See More ⇒

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